BREAKDOWN AND HIGH-FIELD RELIABILITY ISSUES IN HETEROJUNCTION FETs FOR MICROWAVE POWER AMPLIFICATION
نویسنده
چکیده
High-field reliability issues connected with hot electron and impact ionization are typically the reliability bottleneck of power FETs for microwave and millimeter-wave applications. This work deals with some aspects of this problem, from characterization and accelerated stressing techniques to the physical degradation mechanisms, using power AlGaAs/GaAs HFETs as a test vehicle.
منابع مشابه
V. Heterojunction Bipolar Transistors
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